Schottky barriers in carbon nanotube heterojunctions
We investigate electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes. Ineffective screening of the long range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semico...
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Veröffentlicht in: | arXiv.org 1999-10 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We investigate electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes. Ineffective screening of the long range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semiconductor heterostructures. The length of depletion region varies over a wide range (from the nanotube radius to the nanotube length) sensitively depending on the doping strength. The Schottky barrier gives rise to the asymmetry of the I-V characteristics of heterojunctions, in agreement with recent experimental results by Yao {\it et al.} and Fuhrer {\it et al.} Dynamic charge build-up near the junction results in a step-like growth of the current at reverse bias. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.9910137 |