Kinetics of Vacancy Doping in SrTiO^sub 3^ Studied by in situ Electrical Resistivity
The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity...
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Veröffentlicht in: | Materials research (São Carlos, São Paulo, Brazil) São Paulo, Brazil), 2018-01, Vol.21 (4), p.1 |
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creator | Oliveira, Felipe Souza Favero, Ana Carolina Renosto, Sergio Tuan da Luz, Mário Sérgio Moreira dos Santos, Carlos Alberto |
description | The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach. |
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SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. 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SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.</abstract><cop>Sao Carlos</cop><pub>Universidade Federal do Sao Carlos, Departamento de Engenharia de Materiais</pub></addata></record> |
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subjects | Annealing Crystal growth Doping Electrical resistivity Single crystals Strontium titanates Vacancies |
title | Kinetics of Vacancy Doping in SrTiO^sub 3^ Studied by in situ Electrical Resistivity |
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