Kinetics of Vacancy Doping in SrTiO^sub 3^ Studied by in situ Electrical Resistivity

Kinetics of Vacancy Doping in SrTiO^sub 3^ Studied by in situ Electrical Resistivity

The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity...

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Veröffentlicht in:Materials research (São Carlos, São Paulo, Brazil) São Paulo, Brazil), 2018-01, Vol.21 (4), p.1
Hauptverfasser: Oliveira, Felipe Souza, Favero, Ana Carolina, Renosto, Sergio Tuan, da Luz, Mário Sérgio, Moreira dos Santos, Carlos Alberto
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Crystal growth
Doping
Electrical resistivity
Single crystals
Strontium titanates
Vacancies
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Zusammenfassung:The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.
ISSN:1516-1439
1980-5373