Thermal annealing improves electrical properties of hetero-junction diode

Even though conductivity of ZnO is largely decided by doping of impurities, the vacancy is a deciding factor whether the ZnO will have donors or acceptors. Experiments in the past, indicate that the Nitrogen doped Zinc Oxide exhibit p type of conductivity. In the present study, P-type ZnO is obtained by co-doping nitrogen with DC magnetron sputtered process, followed by thermal annealing in Nitrogen ambient, on top of n-type Silicon< 100 > substrate to fabricate p-zno:n-Si hetero-junction. The interface exhibit photosensitive diode like behavior.