Discrete Charging in Polysilicon Gates of Single Electron Transistors

Discrete Charging in Polysilicon Gates of Single Electron Transistors

Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison wit...

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Veröffentlicht in:arXiv.org 2014-01
Hauptverfasser: Kotekar-Patil, Dharmraj, Jauerneck, Stefan, Wharam, David, Kern, Dieter, Jehl, Xavier, Wacquez, Romain, Sanquer, M
Format: Artikel
Sprache:eng
Schlagworte:
Charging
CMOS
Electron transport
Electrons
Resistance
Semiconductor devices
Single-electron transistors
Transistors
Variation
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Zusammenfassung:Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands in the polysilicon gates.
ISSN:2331-8422