Structure-Dependent Magnetoresistance in the Zn0.1Cd0.9GeAs2 + MnAs Hybrid Nanocomposite
The effect of high pressure on electron transport and on the field dependence of the transverse magnetoresistance has been studied in a hybrid nanocomposite based on the Zn 0.1 Cd 0.9 GeAs 2 matrix and MnAs clusters. A record high negative magnetoresistance of ~74% is formed near a pressure-induced...
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Veröffentlicht in: | JETP letters 2018-05, Vol.107 (10), p.612-617 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The effect of high pressure on electron transport and on the field dependence of the transverse magnetoresistance has been studied in a hybrid nanocomposite based on the Zn
0.1
Cd
0.9
GeAs
2
matrix and MnAs clusters. A record high negative magnetoresistance of ~74% is formed near a pressure-induced structural transition (
P
≈ 3.5 GPa). The considered scattering mechanisms include both the contribution from MnAs clusters at relatively low pressures (up to 0.7 GPa) and spin-dependent scattering by localized magnetic moments in the Mn-substituted structure of the matrix in the region of the structural transition. The presence of the positive magnetoresistance region associated with the two-band transport model in the high-pressure phase, as well as the large negative magnetoresistance, is described in the framework of the semiempirical Khosla–Fischer expression. |
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ISSN: | 0021-3640 1090-6487 |
DOI: | 10.1134/S0021364018100041 |