Diamond Diode Structures Based on Homoepitaxial Films

( m – i – p )-Structures with high-resistance epitaxial i -layers are fabricated on heavily doped p + -type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical ( C – V and I – V characteristics) me...

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Veröffentlicht in:	Journal of communications technology & electronics 2018-07, Vol.63 (7), p.828-834
Hauptverfasser:	Rodionov, N. B., Pal’, A. F., Bol’shakov, A. P., Ral’chenko, V. G., Khmel’nitskiy, R. A., Dravin, V. A., Malykhin, S. A., Altukhov, I. V., Kagan, M. S., Paprotskiy, S. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Communications Engineering Detection equipment Detectors Diamond films Diamonds Diodes Electronic devices Engineering Epitaxy Ionization Ionizing radiation Networks Novel Radio Systems and Elements Photovoltaic cells Platinum Radiation Solar cells Substrates
Online-Zugang:	Volltext
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