Diamond Diode Structures Based on Homoepitaxial Films

( m – i – p )-Structures with high-resistance epitaxial i -layers are fabricated on heavily doped p + -type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical ( C – V and I – V characteristics) methods and tested as detectors of ionizing radiation. It is shown that the ( m – i – p )-structures are promising for development of several electronic devices (high-voltage diodes, detectors of ionizing radiation, and photovoltaic devices).