Diamond Diode Structures Based on Homoepitaxial Films
( m – i – p )-Structures with high-resistance epitaxial i -layers are fabricated on heavily doped p + -type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical ( C – V and I – V characteristics) me...
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| Veröffentlicht in: | Journal of communications technology & electronics 2018-07, Vol.63 (7), p.828-834 |
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| container_issue | 7 |
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| container_title | Journal of communications technology & electronics |
| container_volume | 63 |
| creator | Rodionov, N. B. Pal’, A. F. Bol’shakov, A. P. Ral’chenko, V. G. Khmel’nitskiy, R. A. Dravin, V. A. Malykhin, S. A. Altukhov, I. V. Kagan, M. S. Paprotskiy, S. K. |
| description | (
m
–
i
–
p
)-Structures with high-resistance epitaxial
i
-layers are fabricated on heavily doped
p
+
-type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical (
C
–
V
and
I
–
V
characteristics) methods and tested as detectors of ionizing radiation. It is shown that the (
m
–
i
–
p
)-structures are promising for development of several electronic devices (high-voltage diodes, detectors of ionizing radiation, and photovoltaic devices). |
| doi_str_mv | 10.1134/S1064226918070148 |
| format | Article |
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m
–
i
–
p
)-Structures with high-resistance epitaxial
i
-layers are fabricated on heavily doped
p
+
-type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical (
C
–
V
and
I
–
V
characteristics) methods and tested as detectors of ionizing radiation. It is shown that the (
m
–
i
–
p
)-structures are promising for development of several electronic devices (high-voltage diodes, detectors of ionizing radiation, and photovoltaic devices).</description><identifier>ISSN: 1064-2269</identifier><identifier>EISSN: 1555-6557</identifier><identifier>DOI: 10.1134/S1064226918070148</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Communications Engineering ; Detection equipment ; Detectors ; Diamond films ; Diamonds ; Diodes ; Electronic devices ; Engineering ; Epitaxy ; Ionization ; Ionizing radiation ; Networks ; Novel Radio Systems and Elements ; Photovoltaic cells ; Platinum ; Radiation ; Solar cells ; Substrates</subject><ispartof>Journal of communications technology & electronics, 2018-07, Vol.63 (7), p.828-834</ispartof><rights>Pleiades Publishing, Inc. 2018</rights><rights>COPYRIGHT 2018 Springer</rights><rights>Journal of Communications Technology and Electronics is a copyright of Springer, (2018). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c378t-afbc0a66a9d87e5909bd1dc337d85b1412293a1511c58f33affd90b090c6d0b43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1064226918070148$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1064226918070148$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Rodionov, N. B.</creatorcontrib><creatorcontrib>Pal’, A. F.</creatorcontrib><creatorcontrib>Bol’shakov, A. P.</creatorcontrib><creatorcontrib>Ral’chenko, V. G.</creatorcontrib><creatorcontrib>Khmel’nitskiy, R. A.</creatorcontrib><creatorcontrib>Dravin, V. A.</creatorcontrib><creatorcontrib>Malykhin, S. A.</creatorcontrib><creatorcontrib>Altukhov, I. V.</creatorcontrib><creatorcontrib>Kagan, M. S.</creatorcontrib><creatorcontrib>Paprotskiy, S. K.</creatorcontrib><title>Diamond Diode Structures Based on Homoepitaxial Films</title><title>Journal of communications technology & electronics</title><addtitle>J. Commun. Technol. Electron</addtitle><description>(
m
–
i
–
p
)-Structures with high-resistance epitaxial
i
-layers are fabricated on heavily doped
p
+
-type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical (
C
–
V
and
I
–
V
characteristics) methods and tested as detectors of ionizing radiation. It is shown that the (
m
–
i
–
p
)-structures are promising for development of several electronic devices (high-voltage diodes, detectors of ionizing radiation, and photovoltaic devices).</description><subject>Communications Engineering</subject><subject>Detection equipment</subject><subject>Detectors</subject><subject>Diamond films</subject><subject>Diamonds</subject><subject>Diodes</subject><subject>Electronic devices</subject><subject>Engineering</subject><subject>Epitaxy</subject><subject>Ionization</subject><subject>Ionizing radiation</subject><subject>Networks</subject><subject>Novel Radio Systems and Elements</subject><subject>Photovoltaic cells</subject><subject>Platinum</subject><subject>Radiation</subject><subject>Solar cells</subject><subject>Substrates</subject><issn>1064-2269</issn><issn>1555-6557</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>N95</sourceid><sourceid>BENPR</sourceid><recordid>eNp1kVFLwzAQgIsoOKc_wLeCT4KduaRpm8e5OTcYCE6fS5qkM2NtZpLC_PdmVNAhcpA7ct93IVwUXQMaAZD0fgUoSzHOGBQoR5AWJ9EAKKVJRml-GurQTg798-jCuQ1ChGWIDCI61bwxrYyn2kgVr7zthO-scvEDd0rGpo3npjFqpz3fa76NZ3rbuMvorOZbp66-8zB6mz2-TubJ8vlpMRkvE0Hywie8rgTiWcaZLHJFGWKVBCkIyWVBK0gBY0Y4UABBi5oQXteSoQoxJDKJqpQMo5t-7s6aj045X25MZ9vwZIlRjhkFhPNAjXpqzbeq1G1tvOUihFSNFqZVtQ73Y5qyHApcsCDcHgmB8Wrv17xzrlysXo7Zu19s1TndKhcOp9fv3vXKEQ49Lqxxzqq63FndcPtZAioPmyr_bCo4uHdcYNu1sj-__F_6AqSYke0</recordid><startdate>20180701</startdate><enddate>20180701</enddate><creator>Rodionov, N. 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B.</au><au>Pal’, A. F.</au><au>Bol’shakov, A. P.</au><au>Ral’chenko, V. G.</au><au>Khmel’nitskiy, R. A.</au><au>Dravin, V. A.</au><au>Malykhin, S. A.</au><au>Altukhov, I. V.</au><au>Kagan, M. S.</au><au>Paprotskiy, S. K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diamond Diode Structures Based on Homoepitaxial Films</atitle><jtitle>Journal of communications technology & electronics</jtitle><stitle>J. Commun. Technol. Electron</stitle><date>2018-07-01</date><risdate>2018</risdate><volume>63</volume><issue>7</issue><spage>828</spage><epage>834</epage><pages>828-834</pages><issn>1064-2269</issn><eissn>1555-6557</eissn><abstract>(
m
–
i
–
p
)-Structures with high-resistance epitaxial
i
-layers are fabricated on heavily doped
p
+
-type substrates with platinum contacts. The structures are studied using several methods: optical and electron microscopy and luminescence, and electrophysical (
C
–
V
and
I
–
V
characteristics) methods and tested as detectors of ionizing radiation. It is shown that the (
m
–
i
–
p
)-structures are promising for development of several electronic devices (high-voltage diodes, detectors of ionizing radiation, and photovoltaic devices).</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1064226918070148</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1064-2269 |
| ispartof | Journal of communications technology & electronics, 2018-07, Vol.63 (7), p.828-834 |
| issn | 1064-2269 1555-6557 |
| language | eng |
| recordid | cdi_proquest_journals_2072951027 |
| source | SpringerLink Journals |
| subjects | Communications Engineering Detection equipment Detectors Diamond films Diamonds Diodes Electronic devices Engineering Epitaxy Ionization Ionizing radiation Networks Novel Radio Systems and Elements Photovoltaic cells Platinum Radiation Solar cells Substrates |
| title | Diamond Diode Structures Based on Homoepitaxial Films |
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