Quantum transport through MoS\(_2\) constrictions defined by photodoping

We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS\(_2\)) constrictions using photodoping. The devices are based on van-der-Waals heterostructures where few-layer MoS\(_2\) flakes are partially encapsulated by hexagonal boron nitride (hBN) and covered by a few-layer graphene flake to fabricate electrical contacts. Since the as-fabricated devices are insulating at low temperatures, we use photo-induced remote doping in the hBN substrate to create free charge carriers in the MoS\(_2\) layer. On top of the device, we place additional metal structures, which define the shape of the constriction and act as shadow masks during photodoping of the underlying MoS\(_2\)/hBN heterostructure. Low temperature two- and four-terminal transport measurements show evidence of quantum confinement effects.