An analysis of the specificity of defects embedded into (1 0 0) and (1 1 1) faceted CVD diamond microcrystals grown on Si and Mo substrates by using E/H field discharge

•PECVD method was used for (1 0 0) and (1 1 1) faceted diamond crystals growth.•Optical methods were used for investigation of defects in (1 0 0) and (1 1 1) grains.•N-related complexes, such as N-V, exist in both (1 0 0) and (1 1 1) faceted grains.•Complexes N-V-N registered in (1 0 0) grains are not typical for (1 1 1) ones.•(1 0 0) faceted microcrystals on Si substrate contain Si dopants. The PE CVD method with magnetic field discharge stabilization was applied for the growth of arrays of freestanding diamond grains (island films) as well as continuous films on Mo and Si substrates with (1 1 1) and (1 0 0) faceted microcrystals, respectively. Raman, SEM, XRD and PL methods were used for search of the specific features of defects embedded into (1 0 0) and (1 1 1) faceted grains. The main characteristic differences in the defect states of the diamond island films grown on Si and Mo substrates with (1 0 0) and (1 1 1) faceted diamond microcrystals were discussed on the base of the experimental data.