Yb-doped mixed-sesquioxide films grown by pulsed laser deposition

•Yb-doped lutetium scandium oxide films are grown via pulsed laser deposition.•Films are compositionally tuned to a 0.1% lattice mismatch with sapphire substrate.•Growth optimization increases the film crystallinity and reduces scattering points.•Films shown to be of single crystal quality. Growth a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of crystal growth 2018-06, Vol.491, p.51-56
Hauptverfasser: Prentice, Jake J., Grant-Jacob, James A., Shepherd, David P., Eason, Robert W., Mackenzie, Jacob I.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:•Yb-doped lutetium scandium oxide films are grown via pulsed laser deposition.•Films are compositionally tuned to a 0.1% lattice mismatch with sapphire substrate.•Growth optimization increases the film crystallinity and reduces scattering points.•Films shown to be of single crystal quality. Growth and characterization of compositionally tuned, ytterbium-doped mixed lutetium-scandium oxide, and pure lutetia and scandia crystalline films are presented. Pulsed laser deposition was employed to grow these sesquioxide films, of thicknesses up to 20 µm, on (0 0 0 1)-sapphire substrates. By varying the atomic ratio of lutetium to scandium in the target, the lattice parameter of the resulting films could be tuned to match that of the single-crystal c-cut sapphire substrate and thereby achieve a lattice mismatch of
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.03.039