Proximity induced superconductivity in indium gallium arsenide quantum wells

•The proximity induced superconducting properties in In0.75Ga0.25As quantum well is reported in this paper.•Nb-InGaAs-Nb ballistic Josephson junction with homogeneous and barrier-free interfaces are demonstrated.•The presented platform may be useful in the development of integrated quantum circuitry. We report on the experimental observation of the proximity induced superconductivity in an indium gallium arsenide (In0.75Ga0.25As) quantum well. The Josephson junction was fabricated by several photo-lithographic processes on an InGaAs heterojunction and Niobium (Nb) was used as superconducting electrodes. Owing to the Andreev reflections and Andreev bound states at the Nb-In0.75Ga0.25As quantum well-Nb interfaces, the subharmonic energy gap structures (SGS) are observed at the differential conductance (dI/dV) versus voltage (V) plots when the applied source-drain bias voltages satisfy the expression VSD = 2Δ/ne. The dI/dV as a function of applied magnetic field B shows a maximum at zero B which decreases by increasing B. When decreasing B to below ±0.4 T, a hysteresis and shift of the conductance maxima close to B = 0 T are observed. Our results help to pave the way to the development of integrated coherent quantum circuitry.