IGZO-based electrolyte-gated field-effect transistor for in situ biological sensing platform

IGZO-based electrolyte-gated field-effect transistor for in situ biological sensing platform

IGZO-based EGFETs are developed as a biosensing platform and employed for pH sensing and in situ detection of the pivotal hallmark of Parkinson’s disease. [Display omitted] •Amorphous indium gallium zinc oxide (IGZO)-based electrolyte-gated field-effect transistors (EGFETs) were proposed as a biosen...

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Veröffentlicht in:Sensors and actuators. B, Chemical Chemical, 2018-06, Vol.262, p.876-883
Hauptverfasser: Chae, Myung-Sic, Park, Ju Hyun, Son, Hyun Woo, Hwang, Kyo Seon, Kim, Tae Geun
Format: Artikel
Sprache:eng
Schlagworte:
Biosensor
Biosensors
Detection
EGFET
Electrolytes
Feasibility studies
Field effect transistors
Gallium
Igzo
Indium gallium zinc oxide
Monoclonal antibodies
Oxide semiconductor
Proteins
Semiconductor devices
Studies
Zinc oxide
Zinc oxides
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Beschreibung
Zusammenfassung:IGZO-based EGFETs are developed as a biosensing platform and employed for pH sensing and in situ detection of the pivotal hallmark of Parkinson’s disease. [Display omitted] •Amorphous indium gallium zinc oxide (IGZO)-based electrolyte-gated field-effect transistors (EGFETs) were proposed as a biosensing platform.•Fabricated IGZO-EGFETs were operated at a low gate bias (
ISSN:0925-4005
1873-3077
DOI:10.1016/j.snb.2018.02.090