Influence of [6,6]-Phenyl-C61-butyric Acid Methyl Ester doping on Au/CH^sub 3^NH^sub 3^PbI^sub 3^/Au metal-semiconductor-metal (MSM) photoelectric detectors

Influence of [6,6]-Phenyl-C61-butyric Acid Methyl Ester doping on Au/CH^sub 3^NH^sub 3^PbI^sub 3^/Au metal-semiconductor-metal (MSM) photoelectric detectors

In this manuscript, Au/CH3NH3PbI3/Au metal-semiconductor-metal (MSM) photoelectric detectors with different concentrations of [6,6]-Phenyl-C61-butyric Acid Methyl Ester (PCBM) doping are studied. It is found that with PCBM doping, the zero voltage shifts of MSM detector are inhibited, and the dark c...

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Veröffentlicht in:Materials letters 2018-04, Vol.217, p.139
Hauptverfasser: Luan, Suzhen, Liu, Yintao, Wang, Yucheng, Jia, Renxu
Format: Artikel
Sprache:eng
Schlagworte:
Butyric acid
Dark current
Doping
Electric potential
Gold
Materials science
Perovskites
Photoelectricity
Response time
Semiconductor doping
Semiconductors
Sensors
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Zusammenfassung:In this manuscript, Au/CH3NH3PbI3/Au metal-semiconductor-metal (MSM) photoelectric detectors with different concentrations of [6,6]-Phenyl-C61-butyric Acid Methyl Ester (PCBM) doping are studied. It is found that with PCBM doping, the zero voltage shifts of MSM detector are inhibited, and the dark currents increase slightly which result in the smaller light-dark current ratio and detectivity. It is speculated that the vacancies in CH3NH3PbI3 are filled by PCBM, and the captured electrons are release. The MSM detector with 0.01 wt% PCBM doping shows high responsivity (35 mA W−1), detectivity (4.126 × 1010 Jones) and response time (
ISSN:0167-577X
1873-4979