Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film
•Pronounced formation of MoS2 observed in Mo film with dominant (2 1 1) orientation.•Raman and photoluminescence spectroscopy validate formation of a few monolayers of MoS2.•Planar packing factor of preferred orientation influences degree of MoS2 formation. In this letter, we report the effects of p...
Gespeichert in:
| Veröffentlicht in: | Materials letters 2018-05, Vol.219, p.174-177 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 177 |
|---|---|
| container_issue | |
| container_start_page | 174 |
| container_title | Materials letters |
| container_volume | 219 |
| creator | Chelvanathan, P. Shahahmadi, S.A. Ferdaous, M.T. Sapeli, M.M.I. Sopian, K. Amin, N. |
| description | •Pronounced formation of MoS2 observed in Mo film with dominant (2 1 1) orientation.•Raman and photoluminescence spectroscopy validate formation of a few monolayers of MoS2.•Planar packing factor of preferred orientation influences degree of MoS2 formation.
In this letter, we report the effects of preferred crystallographic orientation of Mo films on the formation of MoS2 layer through elemental sulphurization process. Vacuum thermal annealing of as-sputtered Mo films results in noticeable change in preferred crystallographic orientation from (1 1 0) to (2 1 1) plane. Correlation between structural and Raman spectroscopy study indicates that Mo film with predominantly (2 1 1) orientation results in pronounced formation of MoS2 compared to the film with the higher degree of (1 1 0) orientation. Planar packing factor, which depends on crystallographic orientation is proposed to play a crucial role in determining the degree of MoS2 formation. |
| doi_str_mv | 10.1016/j.matlet.2018.02.087 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2063860541</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167577X18303021</els_id><sourcerecordid>2063860541</sourcerecordid><originalsourceid>FETCH-LOGICAL-c334t-be01664e3cfae4649a847dfa96ee02251390174aabda6c9b834305240c17f50c3</originalsourceid><addsrcrecordid>eNp9kE1P4zAQhq0VK21h-QccLHFOdhw7cXJBQuVjkYo4sCtxs1xnQl25cbBdpP57XAVx5DSX93ln5iHkgkHJgDV_tuVOJ4eprIC1JVQltPIHWbBW8kJ0sjshixyTRS3lyy9yGuMWAEQHYkHeln5MwTun1w7p4ENusn6kfqCP_rmi71bTKeCAIWBPTTjEpJ3zr0FPG2uoDxbHNCM73-_dF32zLOK0TwmP3KOnaWNHOli3-01-DtpFPP-cZ-T_3e2_5d9i9XT_sLxeFYZzkYo15pMbgdwMGkUjOt0K2Q-6axChqmrGO2BSaL3udWO6dcsFh7oSYJgcajD8jFzOvVPwb3uMSW39Pox5paqg4W0DtWA5JeaUCT7G_Kiagt3pcFAM1FGu2qpZrjrKVVCpLDdjVzOG-YN3i0FFk00Y7G1Ak1Tv7fcFHwGHhnA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2063860541</pqid></control><display><type>article</type><title>Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Chelvanathan, P. ; Shahahmadi, S.A. ; Ferdaous, M.T. ; Sapeli, M.M.I. ; Sopian, K. ; Amin, N.</creator><creatorcontrib>Chelvanathan, P. ; Shahahmadi, S.A. ; Ferdaous, M.T. ; Sapeli, M.M.I. ; Sopian, K. ; Amin, N.</creatorcontrib><description>•Pronounced formation of MoS2 observed in Mo film with dominant (2 1 1) orientation.•Raman and photoluminescence spectroscopy validate formation of a few monolayers of MoS2.•Planar packing factor of preferred orientation influences degree of MoS2 formation.
In this letter, we report the effects of preferred crystallographic orientation of Mo films on the formation of MoS2 layer through elemental sulphurization process. Vacuum thermal annealing of as-sputtered Mo films results in noticeable change in preferred crystallographic orientation from (1 1 0) to (2 1 1) plane. Correlation between structural and Raman spectroscopy study indicates that Mo film with predominantly (2 1 1) orientation results in pronounced formation of MoS2 compared to the film with the higher degree of (1 1 0) orientation. Planar packing factor, which depends on crystallographic orientation is proposed to play a crucial role in determining the degree of MoS2 formation.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2018.02.087</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Crystallography ; CZTS solar cells ; Materials science ; Mo crystallographic orientation ; Molybdenum disulfide ; MoS2 ; Orientation ; Photovoltaic cells ; Sputtering ; Sulfurization ; Sulphurization ; Thin films</subject><ispartof>Materials letters, 2018-05, Vol.219, p.174-177</ispartof><rights>2018 Elsevier B.V.</rights><rights>Copyright Elsevier BV May 15, 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c334t-be01664e3cfae4649a847dfa96ee02251390174aabda6c9b834305240c17f50c3</citedby><cites>FETCH-LOGICAL-c334t-be01664e3cfae4649a847dfa96ee02251390174aabda6c9b834305240c17f50c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.matlet.2018.02.087$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3549,27923,27924,45994</link.rule.ids></links><search><creatorcontrib>Chelvanathan, P.</creatorcontrib><creatorcontrib>Shahahmadi, S.A.</creatorcontrib><creatorcontrib>Ferdaous, M.T.</creatorcontrib><creatorcontrib>Sapeli, M.M.I.</creatorcontrib><creatorcontrib>Sopian, K.</creatorcontrib><creatorcontrib>Amin, N.</creatorcontrib><title>Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film</title><title>Materials letters</title><description>•Pronounced formation of MoS2 observed in Mo film with dominant (2 1 1) orientation.•Raman and photoluminescence spectroscopy validate formation of a few monolayers of MoS2.•Planar packing factor of preferred orientation influences degree of MoS2 formation.
In this letter, we report the effects of preferred crystallographic orientation of Mo films on the formation of MoS2 layer through elemental sulphurization process. Vacuum thermal annealing of as-sputtered Mo films results in noticeable change in preferred crystallographic orientation from (1 1 0) to (2 1 1) plane. Correlation between structural and Raman spectroscopy study indicates that Mo film with predominantly (2 1 1) orientation results in pronounced formation of MoS2 compared to the film with the higher degree of (1 1 0) orientation. Planar packing factor, which depends on crystallographic orientation is proposed to play a crucial role in determining the degree of MoS2 formation.</description><subject>Crystallography</subject><subject>CZTS solar cells</subject><subject>Materials science</subject><subject>Mo crystallographic orientation</subject><subject>Molybdenum disulfide</subject><subject>MoS2</subject><subject>Orientation</subject><subject>Photovoltaic cells</subject><subject>Sputtering</subject><subject>Sulfurization</subject><subject>Sulphurization</subject><subject>Thin films</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp9kE1P4zAQhq0VK21h-QccLHFOdhw7cXJBQuVjkYo4sCtxs1xnQl25cbBdpP57XAVx5DSX93ln5iHkgkHJgDV_tuVOJ4eprIC1JVQltPIHWbBW8kJ0sjshixyTRS3lyy9yGuMWAEQHYkHeln5MwTun1w7p4ENusn6kfqCP_rmi71bTKeCAIWBPTTjEpJ3zr0FPG2uoDxbHNCM73-_dF32zLOK0TwmP3KOnaWNHOli3-01-DtpFPP-cZ-T_3e2_5d9i9XT_sLxeFYZzkYo15pMbgdwMGkUjOt0K2Q-6axChqmrGO2BSaL3udWO6dcsFh7oSYJgcajD8jFzOvVPwb3uMSW39Pox5paqg4W0DtWA5JeaUCT7G_Kiagt3pcFAM1FGu2qpZrjrKVVCpLDdjVzOG-YN3i0FFk00Y7G1Ak1Tv7fcFHwGHhnA</recordid><startdate>20180515</startdate><enddate>20180515</enddate><creator>Chelvanathan, P.</creator><creator>Shahahmadi, S.A.</creator><creator>Ferdaous, M.T.</creator><creator>Sapeli, M.M.I.</creator><creator>Sopian, K.</creator><creator>Amin, N.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20180515</creationdate><title>Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film</title><author>Chelvanathan, P. ; Shahahmadi, S.A. ; Ferdaous, M.T. ; Sapeli, M.M.I. ; Sopian, K. ; Amin, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c334t-be01664e3cfae4649a847dfa96ee02251390174aabda6c9b834305240c17f50c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Crystallography</topic><topic>CZTS solar cells</topic><topic>Materials science</topic><topic>Mo crystallographic orientation</topic><topic>Molybdenum disulfide</topic><topic>MoS2</topic><topic>Orientation</topic><topic>Photovoltaic cells</topic><topic>Sputtering</topic><topic>Sulfurization</topic><topic>Sulphurization</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chelvanathan, P.</creatorcontrib><creatorcontrib>Shahahmadi, S.A.</creatorcontrib><creatorcontrib>Ferdaous, M.T.</creatorcontrib><creatorcontrib>Sapeli, M.M.I.</creatorcontrib><creatorcontrib>Sopian, K.</creatorcontrib><creatorcontrib>Amin, N.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chelvanathan, P.</au><au>Shahahmadi, S.A.</au><au>Ferdaous, M.T.</au><au>Sapeli, M.M.I.</au><au>Sopian, K.</au><au>Amin, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film</atitle><jtitle>Materials letters</jtitle><date>2018-05-15</date><risdate>2018</risdate><volume>219</volume><spage>174</spage><epage>177</epage><pages>174-177</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>•Pronounced formation of MoS2 observed in Mo film with dominant (2 1 1) orientation.•Raman and photoluminescence spectroscopy validate formation of a few monolayers of MoS2.•Planar packing factor of preferred orientation influences degree of MoS2 formation.
In this letter, we report the effects of preferred crystallographic orientation of Mo films on the formation of MoS2 layer through elemental sulphurization process. Vacuum thermal annealing of as-sputtered Mo films results in noticeable change in preferred crystallographic orientation from (1 1 0) to (2 1 1) plane. Correlation between structural and Raman spectroscopy study indicates that Mo film with predominantly (2 1 1) orientation results in pronounced formation of MoS2 compared to the film with the higher degree of (1 1 0) orientation. Planar packing factor, which depends on crystallographic orientation is proposed to play a crucial role in determining the degree of MoS2 formation.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2018.02.087</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-577X |
| ispartof | Materials letters, 2018-05, Vol.219, p.174-177 |
| issn | 0167-577X 1873-4979 |
| language | eng |
| recordid | cdi_proquest_journals_2063860541 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Crystallography CZTS solar cells Materials science Mo crystallographic orientation Molybdenum disulfide MoS2 Orientation Photovoltaic cells Sputtering Sulfurization Sulphurization Thin films |
| title | Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T07%3A29%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Controllable%20formation%20of%20MoS2%20via%20preferred%20crystallographic%20orientation%20modulation%20of%20DC-sputtered%20Mo%20thin%20film&rft.jtitle=Materials%20letters&rft.au=Chelvanathan,%20P.&rft.date=2018-05-15&rft.volume=219&rft.spage=174&rft.epage=177&rft.pages=174-177&rft.issn=0167-577X&rft.eissn=1873-4979&rft_id=info:doi/10.1016/j.matlet.2018.02.087&rft_dat=%3Cproquest_cross%3E2063860541%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2063860541&rft_id=info:pmid/&rft_els_id=S0167577X18303021&rfr_iscdi=true |