Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film

•Pronounced formation of MoS2 observed in Mo film with dominant (2 1 1) orientation.•Raman and photoluminescence spectroscopy validate formation of a few monolayers of MoS2.•Planar packing factor of preferred orientation influences degree of MoS2 formation. In this letter, we report the effects of preferred crystallographic orientation of Mo films on the formation of MoS2 layer through elemental sulphurization process. Vacuum thermal annealing of as-sputtered Mo films results in noticeable change in preferred crystallographic orientation from (1 1 0) to (2 1 1) plane. Correlation between structural and Raman spectroscopy study indicates that Mo film with predominantly (2 1 1) orientation results in pronounced formation of MoS2 compared to the film with the higher degree of (1 1 0) orientation. Planar packing factor, which depends on crystallographic orientation is proposed to play a crucial role in determining the degree of MoS2 formation.