Structural and physical properties of InAlAs quantum dots grown on GaAs

Quantum dots (QDs), which have particular physical properties due to the three dimensions confinement effect, could be used in many advanced optoelectronic applications. We investigated the properties of InAlAs/AlGaAs QDs grown by molecular beam epitaxy on GaAs/Al0.5Ga0.5As layers. The optical properties of QDs were studied by low-temperature photoluminescence (PL). Two bandgap transitions corresponding to the X-Sh and X-Ph energy structure were observed. The QDs structure was investigated using high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM). HRXRD investigations showed that the layers grew epitaxially on the substrate, with no relaxation. HRTEM investigations confirmed the epitaxial nature of the grown structures. In addition, it was revealed that the In atoms aggregated in some prismatic regions, forming areas of high In concentration, that were still in perfect registry with the substrate. •Photoluminescence (PL), the reciprocal space map (RSM), high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM) investigations studies have been performed on a visible-emitting InAlAs/GaAlAs quantum dot (QD) sample.•Sample clearly showed two transitions X-Sh and X-Ph.•HRXRD was performed to determine the QDs strain.