1164.4 nm and 1174.7 nm dual-wavelength Nd: GdVO^sub 4^/Cr^sup 4+^:YAG/YVO^sub 4^ passively Q-switched Raman microchip laser
A synchronous pulsed, dual-wavelength Raman laser at 1164.4 nm and 1174.7 nm has been demonstrated in a Nd:GdVO4/Cr4+:YAG/YVO4 passively Q-switched Raman microchip laser (PQSRML). The 1164.4 nm and 1174.7 nm dual-wavelength first-order Stokes laser oscillation is attributed to the conversion of the...
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Veröffentlicht in: | Applied optics (2004) 2018-04, Vol.57 (12), p.3198 |
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Sprache: | eng |
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Zusammenfassung: | A synchronous pulsed, dual-wavelength Raman laser at 1164.4 nm and 1174.7 nm has been demonstrated in a Nd:GdVO4/Cr4+:YAG/YVO4 passively Q-switched Raman microchip laser (PQSRML). The 1164.4 nm and 1174.7 nm dual-wavelength first-order Stokes laser oscillation is attributed to the conversion of the 1063.2 nm and 1063.43 nm two-longitudinal-mode fundamental lasers with Raman frequency shifts of 816 cm-1 and 890 cm-1, respectively. Stable dual-wavelength Raman laser pulses with nearly equal spectral intensities have been achieved independent of the pump power. A pulse repetition rate as high as 139.4 kHz has been achieved with T0=85%, and the pulse width has been shortened to 825 ps with T0=70%. A dual-wavelength Raman laser with sub-nanosecond pulse width and peak power of over 1 kW has been achieved in the Nd:GdVO4/Cr4+:YAG/YVO4 PQSRML. |
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ISSN: | 1559-128X 2155-3165 |