Monte Carlo study of impact ionization in n-type InAs induced by intense ultrashort terahertz pulses
Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation of electron–hole pairs decreases with the decrease of the pulse duration. The impact ionization...
Gespeichert in:
Veröffentlicht in: | Optical and quantum electronics 2018-06, Vol.50 (6), p.1-9, Article 264 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation of electron–hole pairs decreases with the decrease of the pulse duration. The impact ionization threshold field is found to depend linearly on frequency for the fields oscillating at frequencies much higher than reciprocal momentum relaxation time. Good agreement between calculations and available experimental data has been obtained. |
---|---|
ISSN: | 0306-8919 1572-817X |
DOI: | 10.1007/s11082-018-1528-7 |