Influence of Dislocations to the Diamond SBD Reverse Characteristics

Several studies have been carried out regarding the influence of dislocations on device characteristics; however, most of them had been limited to pseudo-vertical structures using high pressure high temperature (HPHT) insulating material as the substrate. In this study, we have investigated the influence of dislocations to the devices using vertical structure SBD on p+ HPHT substrate. SBDs were selectively fabricated on specific dislocation areas. The SBD fabricated on the threading dislocation area indicated fatal influence of the dislocation on the device characteristics.