Effect of Design Variations and N2O Annealing on 1.7kV 4H-SiC Diodes

In this work we have studied the influence of design and process variations on electrical performance of 1.7 kV 4H-SiC Schottky diodes. Diodes with two variations in their active region design namely, stripe design and segment design, were fabricated in this study. Field Limiting Rings (FLRs) or Junction Termination Extension (JTE) were used as edge termination design to achieve a blocking voltage of 1.7 kV. In addition to these designs an extra processing step of nitrous oxide (N2O) annealing was performed on some of the diodes. The study has shown that there is no extra beneficial effect of nitrous oxide annealing on device characteristics.