Processing of Cavities in SiC Material for Quantum Technologies

Quantum technology is a field of significant interest that will benefit many applications including communications and sensing. SiC is a promising material for quantum applications such as quantum memories, due to point defects, specifically VSi, in the material, which result in long spin coherence times. We have found that no VSi are present in our epitaxially grown unintentionally and nitrogen-doped 4H-SiC with electron concentrations ranging from 1014 to 1018 cm-3. We create these vacancies using electron irradiation, in concentrations from single defects to ensembles. To utilize the defect luminescence for realistic applications, we have fabricated the SiC into photonic crystal arrays. We present the processing steps required to create photonic crystal cavities in SiC and subsequent challenges.