Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer

In this work the deposition of buffer layer has been studied in order to increase the quality of the epitaxial layer and improve the performance of device. The comparison between two different thicknesses of buffer layer reveals a decrease of crystallographic defects and an improvement of electrical...

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Veröffentlicht in:Materials science forum 2018-06, Vol.924, p.84-87
Hauptverfasser: Severino, Andrea, Fiorenza, Patrick, Salanitri, Marco, La Via, Francesco, di Stefano, Maria Ausilia, Anzalone, Ruggero, Campione, Alberto, Fontana, Enzo, Piluso, Nicolo, Lorenti, Simona
Format: Artikel
Sprache:eng
Schlagworte:
Buffer layers
Epitaxial growth
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Zusammenfassung:In this work the deposition of buffer layer has been studied in order to increase the quality of the epitaxial layer and improve the performance of device. The comparison between two different thicknesses of buffer layer reveals a decrease of crystallographic defects and an improvement of electrical parameters of MOSFET device as leakage current and breakdown voltage.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.924.84