Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications

This paper presents an investigation into the performance of SiC JBS diodes rated for 6.5kV applications. For the active area layout, two hexagonal cell designs with different ASchottky/ATotal ratios have been considered. For completeness, the JBS performance is compared to that of SiC PiN diodes, f...

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Veröffentlicht in:	Materials science forum 2018-06, Vol.924, p.597-600
Hauptverfasser:	Rahimo, Munaf, Kranz, Lukas, Alfieri, Giovanni, Mihaila, Andrei, Knoll, Lars, Bellini, Marco, Papadopoulos, Charalampos, Bianda, Enea
Format:	Artikel
Sprache:	eng
Schlagworte:	Diodes Materials science Performance evaluation Silicon carbide
Online-Zugang:	Volltext
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Zusammenfassung:	This paper presents an investigation into the performance of SiC JBS diodes rated for 6.5kV applications. For the active area layout, two hexagonal cell designs with different ASchottky/ATotal ratios have been considered. For completeness, the JBS performance is compared to that of SiC PiN diodes, fabricated on the same wafer. A benchmark against state of the art PiN diodes in Si technology is also provided.
ISSN:	0255-5476 1662-9752 1662-9752
DOI:	10.4028/www.scientific.net/MSF.924.597