Room-Temperature Photoluminescence of Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ Lattice Matched to InAs
Photoluminescence (PL) has been observed at room temperature from a Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ with low In content were grown by liq...
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| Veröffentlicht in: | Journal of electronic materials 2004-08, Vol.33 (8), p.867 |
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| creator | Moiseev, K D Krier, A Yakovlev, Y P |
| description | Photoluminescence (PL) has been observed at room temperature from a Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range |
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High-quality epitaxial layers of n-type (Te-doped) Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature. 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High-quality epitaxial layers of n-type (Te-doped) Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature. [PUBLICATION ABSTRACT] Key words: GaInAsSb, InAs substrates, liquid phase epitaxy (LPE), photoluminescence (PL)</description><subject>Atomic layer epitaxy</subject><subject>Luminescence</subject><subject>Optoelectronics</subject><subject>Substrates</subject><subject>Temperature</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNqNy8sKwjAUBNAgCtbHPwT3ldymKe1SxBcoiHbhKiWtV1RsUpvk_-2iH-BqDszMgAQgYh5CmtyGJGA8gVBEXIzJxNo3YyAghYDoizF1mGPdYKucb5Gen8aZj69fGm2FukJqHnSnpPUlZcsskQfdm8VyZXsDyGvZO80kPSrnXt33pFz1xDt1hh70ys7I6KE-Fud9Tsliu8nX-7BpzdejdcXb-FZ3VRGxOM14BIL_NfoBQGhHjA</recordid><startdate>20040801</startdate><enddate>20040801</enddate><creator>Moiseev, K D</creator><creator>Krier, A</creator><creator>Yakovlev, Y P</creator><general>Springer Nature B.V</general><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20040801</creationdate><title>Room-Temperature Photoluminescence of Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ Lattice Matched to InAs</title><author>Moiseev, K D ; 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High-quality epitaxial layers of n-type (Te-doped) Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature. [PUBLICATION ABSTRACT] Key words: GaInAsSb, InAs substrates, liquid phase epitaxy (LPE), photoluminescence (PL)</abstract><cop>Warrendale</cop><pub>Springer Nature B.V</pub></addata></record> |
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| subjects | Atomic layer epitaxy Luminescence Optoelectronics Substrates Temperature |
| title | Room-Temperature Photoluminescence of Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ Lattice Matched to InAs |
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