Room-Temperature Photoluminescence of Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ Lattice Matched to InAs

Room-Temperature Photoluminescence of Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ Lattice Matched to InAs

Photoluminescence (PL) has been observed at room temperature from a Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ with low In content were grown by liq...

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Veröffentlicht in:Journal of electronic materials 2004-08, Vol.33 (8), p.867
Hauptverfasser: Moiseev, K D, Krier, A, Yakovlev, Y P
Format: Artikel
Sprache:eng
Schlagworte:
Atomic layer epitaxy
Luminescence
Optoelectronics
Substrates
Temperature
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Zusammenfassung:Photoluminescence (PL) has been observed at room temperature from a Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range
ISSN:0361-5235
1543-186X