Room-temperature continuous-wave operation of GaN-based laser diodes growth by raised-pressure metalorganic chemical vapor deposition

Room-temperature continuous-wave operation of GaN-based laser diodes growth by raised-pressure metalorganic chemical vapor deposition

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Veröffentlicht in:Journal of electronic materials 1999-03, Vol.28 (3), p.287
Hauptverfasser: Yanashima, Katsunori, Hashimoto, Shigeki, Hino, Tomonori, Funato, Kenji
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container_title Journal of electronic materials
container_volume 28
creator Yanashima, Katsunori
Hashimoto, Shigeki
Hino, Tomonori
Funato, Kenji
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title Room-temperature continuous-wave operation of GaN-based laser diodes growth by raised-pressure metalorganic chemical vapor deposition
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