Improved reproducibility of AlGaInAs laser threshold by InP substrate deoxidation under phosphorous flux

Improved reproducibility of AlGaInAs laser threshold by InP substrate deoxidation under phosphorous flux

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Veröffentlicht in:Journal of electronic materials 1997-05, Vol.26 (5), p.L9-L12
Hauptverfasser: HARMAND, J. C, IDIART-ALHOR, E, MOISON, J. M, BARTHE, F
Format: Artikel
Sprache:eng
Schlagworte:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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container_title Journal of electronic materials
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creator HARMAND, J. C
IDIART-ALHOR, E
MOISON, J. M
BARTHE, F
description
doi_str_mv 10.1007/s11664-997-0122-8
format Article
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source Springer Nature - Complete Springer Journals
subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
title Improved reproducibility of AlGaInAs laser threshold by InP substrate deoxidation under phosphorous flux
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