Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging
Self-powered solar-blind photodetectors based on diamond/β-Ga2O3 heterojunctions have been fabricated. Under zero bias, these photodetectors show a peak responsivity of 0.2 mA W−1, and a sharp cutoff wavelength of 270 nm. The UV/visible rejection ratio is more than two orders of magnitude, indicatin...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (21), p.5727-5732 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Self-powered solar-blind photodetectors based on diamond/β-Ga2O3 heterojunctions have been fabricated. Under zero bias, these photodetectors show a peak responsivity of 0.2 mA W−1, and a sharp cutoff wavelength of 270 nm. The UV/visible rejection ratio is more than two orders of magnitude, indicating that these photodetectors respond mainly to solar-blind irradiation. These photodetectors can exhibit repeatability and stability without any external power supply. High quality images have been obtained using such a self-powered photodetector as a sensing pixel of an imaging system, and this study is the first report on the solar-blind imaging of Ga2O3 based photodetectors. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/c8tc01122b |