Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging

Self-powered solar-blind photodetectors based on diamond/β-Ga2O3 heterojunctions have been fabricated. Under zero bias, these photodetectors show a peak responsivity of 0.2 mA W−1, and a sharp cutoff wavelength of 270 nm. The UV/visible rejection ratio is more than two orders of magnitude, indicatin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2018, Vol.6 (21), p.5727-5732
Hauptverfasser: Yan-Cheng, Chen, Ying-Jie, Lu, Chao-Nan, Lin, Yong-Zhi Tian, Chao-Jun, Gao, Lin, Dong, Chong-Xin, Shan
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Self-powered solar-blind photodetectors based on diamond/β-Ga2O3 heterojunctions have been fabricated. Under zero bias, these photodetectors show a peak responsivity of 0.2 mA W−1, and a sharp cutoff wavelength of 270 nm. The UV/visible rejection ratio is more than two orders of magnitude, indicating that these photodetectors respond mainly to solar-blind irradiation. These photodetectors can exhibit repeatability and stability without any external power supply. High quality images have been obtained using such a self-powered photodetector as a sensing pixel of an imaging system, and this study is the first report on the solar-blind imaging of Ga2O3 based photodetectors.
ISSN:2050-7526
2050-7534
DOI:10.1039/c8tc01122b