P‐18: Improvement of Reliability in Coplanar a‐IGZO TFTs by Multilayer SiO2 Gate Insulator

We investigated the PBTS instability of top‐gate self‐aligned coplanar a‐IGZO TFTs with multilayer SiO2 GI. It is confirmed that the PBTS instability due to the deep charge trapping in GI bulk can be improved by increasing activation energy through the interfacial formation with hydrogen‐low SiO2 deposition, and it is demonstrated experimentally that the PBTS instability due to the excess oxygen in the active region can be improved by hydrogen diffusion process through sequential hydrogen‐rich SiO2 deposition after ACT/GI interface formation.