P‐110: Efficient InP‐based Quantum Dot Light Emitting Diodes utilizing a Crosslinkable Hole Transport Layer

P‐110: Efficient InP‐based Quantum Dot Light Emitting Diodes utilizing a Crosslinkable Hole Transport Layer

We demonstrate efficient InP‐based quantum dot (QD) LEDs utilizing a crosslinkable hole transport layers (HTL). The developed HTL exhibit great solvent resistance and smooth surface roughness. The influence of QD design, HTL structure as well as the corresponding processing of these materials on dev...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2018-05, Vol.49 (1), p.1625-1628
Hauptverfasser: Kim, Yohan, Heyne, Benjamin, Geßner, André, Park, Yongwook, Kang, Moonsung, Ahn, Seonhong, Lee, Bumsung, Wedel, Armin
Format: Artikel
Sprache:eng
Schlagworte:
Corrosion resistance
crosslinkable HTL
Crosslinking
InP
Light emitting diodes
Organic light emitting diodes
QD-LEDs
QLEDs
quantum dot
Quantum dots
Surface roughness
Transport
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Zusammenfassung:We demonstrate efficient InP‐based quantum dot (QD) LEDs utilizing a crosslinkable hole transport layers (HTL). The developed HTL exhibit great solvent resistance and smooth surface roughness. The influence of QD design, HTL structure as well as the corresponding processing of these materials on device performance was investigated.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.12293