P‐127: Dual‐Gate Self‐Aligned IGZO TFTs Monolithically Integrated with High‐Temperature Bottom Moisture Barrier for Flexible AMOLED

We present a 350°C self‐aligned dual‐gate a‐IGZO backplane technology with a monolithically integrated multi‐layer high‐temperature thin‐film barrier for flexible AMOLED. Thin‐film barrier properties and TFT technology are optimized on 320 x 352mm substrates, and demonstrated in a flexible QQVGA 100...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2018-05, Vol.49 (1), p.1577-1580
Hauptverfasser:	Kronemeijer, Auke Jisk, Akkerman, Hylke, Steen, Jan-Laurens, Steudel, Soeren, Pendyala, Raghu, Panditha, Pradeep, Bel, Thijs, Diesen, Karin, Haas, Gerard, Maas, Joris, Riet, Joris, Rovers, Madelon, Verbeek, Roy, Nag, Manoj, Verschueren, Lynn, Genoe, Jan, Dehaene, Wim, Lu, Ya-Ju, Chiang, Shin-Chuan, Huang, Yen-Yu, Yeh, Ming-Hua, Gelinck, Gerwin
Format:	Artikel
Sprache:	eng
Schlagworte:	Active matrix displays Backplanes Barriers Flexible AMOLED Displays High Temperature Moisture Barrier Indium gallium zinc oxide Metal-oxide semiconductors Self-aligned dual-gate TFT Substrates
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Beschreibung
Zusammenfassung:	We present a 350°C self‐aligned dual‐gate a‐IGZO backplane technology with a monolithically integrated multi‐layer high‐temperature thin‐film barrier for flexible AMOLED. Thin‐film barrier properties and TFT technology are optimized on 320 x 352mm substrates, and demonstrated in a flexible QQVGA 100 ppi AMOLED display prototype.
ISSN:	0097-966X 2168-0159
DOI:	10.1002/sdtp.12311