P‐62: The Process and Characteristic of new High Thickness Negative Photoresist
In this paper, the process and characteristic of a new kind of high thickness negative photoresist were studied. Through process optimization, the 60~110um height post spacer (PS) was achieved successfully in 5.5G production line. The PS morphology was in good condition and the elastic recovery rate...
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| Veröffentlicht in: | SID International Symposium Digest of technical papers 2018-05, Vol.49 (1), p.1433-1435 |
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| container_title | SID International Symposium Digest of technical papers |
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| creator | Zhang, Jiaxiang Wang, Yanqiang Tong, Shuo Zhou, Yongshan Feng, Longqiang Qing, Yifeng Lu, Kai Huang, Dongsheng Chen, Si Wang, Wei |
| description | In this paper, the process and characteristic of a new kind of high thickness negative photoresist were studied. Through process optimization, the 60~110um height post spacer (PS) was achieved successfully in 5.5G production line. The PS morphology was in good condition and the elastic recovery rate could more than 90%.This paper also studied the influence on the PS at different dose quantity. The dose quantity had little influence on PS morphology, but a large effect on the elastic recovery rate. When the dose quantity was greater than 400mj, the elastic recovery rate could achieve the best state. |
| doi_str_mv | 10.1002/sdtp.12213 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2047441218</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2047441218</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1053-2fd0a96706963e29160b627c03fb3d38aa65accdb2368bc810a2fc3eb3faa9e03</originalsourceid><addsrcrecordid>eNp90L1OwzAUBWALgUQpLDyBJTaklGs7dWI2VH6KVEERRWKzHMduXCAudkrVjUfgGXkSUsLMdJfvnCsdhI4JDAgAPYtlsxwQSgnbQT1KeJ4AGYpd1AMQWSI4f95HBzEuABhLU9FDD9Pvzy9Oz_GsMngavDYxYlWXeFSpoHRjgouN09hbXJs1Hrt51VKnX-otvDNz1biPNln5xgcTW3yI9qx6jebo7_bR0_XVbDROJvc3t6OLSaIJDFlCbQlK8Ay44MxQQTgUnGYamC1YyXKl-FBpXRaU8bzQOQFFrWamYFYpYYD10UnXuwz-fWViIxd-Fer2paSQZmlKKMlbddopHXyMwVi5DO5NhY0kILeTye1k8neyFpMOr92r2fwj5ePlbNplfgDgpW66</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2047441218</pqid></control><display><type>article</type><title>P‐62: The Process and Characteristic of new High Thickness Negative Photoresist</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Zhang, Jiaxiang ; Wang, Yanqiang ; Tong, Shuo ; Zhou, Yongshan ; Feng, Longqiang ; Qing, Yifeng ; Lu, Kai ; Huang, Dongsheng ; Chen, Si ; Wang, Wei</creator><creatorcontrib>Zhang, Jiaxiang ; Wang, Yanqiang ; Tong, Shuo ; Zhou, Yongshan ; Feng, Longqiang ; Qing, Yifeng ; Lu, Kai ; Huang, Dongsheng ; Chen, Si ; Wang, Wei</creatorcontrib><description>In this paper, the process and characteristic of a new kind of high thickness negative photoresist were studied. Through process optimization, the 60~110um height post spacer (PS) was achieved successfully in 5.5G production line. The PS morphology was in good condition and the elastic recovery rate could more than 90%.This paper also studied the influence on the PS at different dose quantity. The dose quantity had little influence on PS morphology, but a large effect on the elastic recovery rate. When the dose quantity was greater than 400mj, the elastic recovery rate could achieve the best state.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.12213</identifier><language>eng</language><publisher>Campbell: Wiley Subscription Services, Inc</publisher><subject>Dosage ; Elastic recovery ; Elastic recovery rate ; Film uniformity ; High Thickness Negative Photoresist ; LCD antenna ; Liquid crystal lens ; Morphology ; PS morphology</subject><ispartof>SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.1433-1435</ispartof><rights>2018 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1053-2fd0a96706963e29160b627c03fb3d38aa65accdb2368bc810a2fc3eb3faa9e03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsdtp.12213$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsdtp.12213$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1416,27922,27923,45572,45573</link.rule.ids></links><search><creatorcontrib>Zhang, Jiaxiang</creatorcontrib><creatorcontrib>Wang, Yanqiang</creatorcontrib><creatorcontrib>Tong, Shuo</creatorcontrib><creatorcontrib>Zhou, Yongshan</creatorcontrib><creatorcontrib>Feng, Longqiang</creatorcontrib><creatorcontrib>Qing, Yifeng</creatorcontrib><creatorcontrib>Lu, Kai</creatorcontrib><creatorcontrib>Huang, Dongsheng</creatorcontrib><creatorcontrib>Chen, Si</creatorcontrib><creatorcontrib>Wang, Wei</creatorcontrib><title>P‐62: The Process and Characteristic of new High Thickness Negative Photoresist</title><title>SID International Symposium Digest of technical papers</title><description>In this paper, the process and characteristic of a new kind of high thickness negative photoresist were studied. Through process optimization, the 60~110um height post spacer (PS) was achieved successfully in 5.5G production line. The PS morphology was in good condition and the elastic recovery rate could more than 90%.This paper also studied the influence on the PS at different dose quantity. The dose quantity had little influence on PS morphology, but a large effect on the elastic recovery rate. When the dose quantity was greater than 400mj, the elastic recovery rate could achieve the best state.</description><subject>Dosage</subject><subject>Elastic recovery</subject><subject>Elastic recovery rate</subject><subject>Film uniformity</subject><subject>High Thickness Negative Photoresist</subject><subject>LCD antenna</subject><subject>Liquid crystal lens</subject><subject>Morphology</subject><subject>PS morphology</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp90L1OwzAUBWALgUQpLDyBJTaklGs7dWI2VH6KVEERRWKzHMduXCAudkrVjUfgGXkSUsLMdJfvnCsdhI4JDAgAPYtlsxwQSgnbQT1KeJ4AGYpd1AMQWSI4f95HBzEuABhLU9FDD9Pvzy9Oz_GsMngavDYxYlWXeFSpoHRjgouN09hbXJs1Hrt51VKnX-otvDNz1biPNln5xgcTW3yI9qx6jebo7_bR0_XVbDROJvc3t6OLSaIJDFlCbQlK8Ay44MxQQTgUnGYamC1YyXKl-FBpXRaU8bzQOQFFrWamYFYpYYD10UnXuwz-fWViIxd-Fer2paSQZmlKKMlbddopHXyMwVi5DO5NhY0kILeTye1k8neyFpMOr92r2fwj5ePlbNplfgDgpW66</recordid><startdate>201805</startdate><enddate>201805</enddate><creator>Zhang, Jiaxiang</creator><creator>Wang, Yanqiang</creator><creator>Tong, Shuo</creator><creator>Zhou, Yongshan</creator><creator>Feng, Longqiang</creator><creator>Qing, Yifeng</creator><creator>Lu, Kai</creator><creator>Huang, Dongsheng</creator><creator>Chen, Si</creator><creator>Wang, Wei</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>201805</creationdate><title>P‐62: The Process and Characteristic of new High Thickness Negative Photoresist</title><author>Zhang, Jiaxiang ; Wang, Yanqiang ; Tong, Shuo ; Zhou, Yongshan ; Feng, Longqiang ; Qing, Yifeng ; Lu, Kai ; Huang, Dongsheng ; Chen, Si ; Wang, Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1053-2fd0a96706963e29160b627c03fb3d38aa65accdb2368bc810a2fc3eb3faa9e03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Dosage</topic><topic>Elastic recovery</topic><topic>Elastic recovery rate</topic><topic>Film uniformity</topic><topic>High Thickness Negative Photoresist</topic><topic>LCD antenna</topic><topic>Liquid crystal lens</topic><topic>Morphology</topic><topic>PS morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Jiaxiang</creatorcontrib><creatorcontrib>Wang, Yanqiang</creatorcontrib><creatorcontrib>Tong, Shuo</creatorcontrib><creatorcontrib>Zhou, Yongshan</creatorcontrib><creatorcontrib>Feng, Longqiang</creatorcontrib><creatorcontrib>Qing, Yifeng</creatorcontrib><creatorcontrib>Lu, Kai</creatorcontrib><creatorcontrib>Huang, Dongsheng</creatorcontrib><creatorcontrib>Chen, Si</creatorcontrib><creatorcontrib>Wang, Wei</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Jiaxiang</au><au>Wang, Yanqiang</au><au>Tong, Shuo</au><au>Zhou, Yongshan</au><au>Feng, Longqiang</au><au>Qing, Yifeng</au><au>Lu, Kai</au><au>Huang, Dongsheng</au><au>Chen, Si</au><au>Wang, Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>P‐62: The Process and Characteristic of new High Thickness Negative Photoresist</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2018-05</date><risdate>2018</risdate><volume>49</volume><issue>1</issue><spage>1433</spage><epage>1435</epage><pages>1433-1435</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>In this paper, the process and characteristic of a new kind of high thickness negative photoresist were studied. Through process optimization, the 60~110um height post spacer (PS) was achieved successfully in 5.5G production line. The PS morphology was in good condition and the elastic recovery rate could more than 90%.This paper also studied the influence on the PS at different dose quantity. The dose quantity had little influence on PS morphology, but a large effect on the elastic recovery rate. When the dose quantity was greater than 400mj, the elastic recovery rate could achieve the best state.</abstract><cop>Campbell</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sdtp.12213</doi><tpages>3</tpages></addata></record> |
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| ispartof | SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.1433-1435 |
| issn | 0097-966X 2168-0159 |
| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Dosage Elastic recovery Elastic recovery rate Film uniformity High Thickness Negative Photoresist LCD antenna Liquid crystal lens Morphology PS morphology |
| title | P‐62: The Process and Characteristic of new High Thickness Negative Photoresist |
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