P‐111: Black Photoresist Bank for Inkjet‐Printed Quantum Dot Light‐Emitting Diodes

P‐111: Black Photoresist Bank for Inkjet‐Printed Quantum Dot Light‐Emitting Diodes

We demonstrated a bank structure for inkjet‐printed quantum dot light‐emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B‐PR). The B‐PR banks have low surface energy (13 mJ m −2 ), resulting in well confined quantum dot (QD) ink inside the pixel area. Based...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2018-05, Vol.49 (1), p.1629-1631
Hauptverfasser: Ko, Donghyun, Han, Jongseok, Roh, Heebum, Park, Yeseul, Lee, Jiwon, Kim, Juho, Kim, Hunsik, Kim, Hyungjoo, Lee, Jongsoo, Bae, Wan Ki, Lee, Changhee
Format: Artikel
Sprache:eng
Schlagworte:
black photoresist
inkjet printing
Organic light emitting diodes
Photolithography
quantum dot light emitting diodes
Quantum dots
Quantum efficiency
Surface energy
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Zusammenfassung:We demonstrated a bank structure for inkjet‐printed quantum dot light‐emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B‐PR). The B‐PR banks have low surface energy (13 mJ m −2 ), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B‐PR bank structure, we demonstrated a QLED with 0.20 % of external quantum efficiency.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.12294