Study of Stark Effect in n-doped 1.55 μm InN0.92yP1−1.92yBiy/InP MQWs

The effect of an applied electric field on electronic band structure and optical absorption properties of n -doped InN 0.92 y P 1−1.92 y Bi y /InP multiple quantum wells (MQWs) was theoretically studied using a self-consistent calculation combined with the 16-band anti-crossing model. The incorporation of N and Bi atoms into an InP host matrix leads to rapid reduction of the band gap energy covering a large infrared range. The optimization of the well parameters, such as the well/barrier widths, N/Bi compositions and doping density, allowed us to obtain InN 0.92 y P 1−1.92 y Bi y /InP MQWs operating at the wavelength 1.55 μ m. Application of the electric field causes a red-shift of the fundamental transition energy T 1 accompanied by a significant change in the spatial distribution of confined electron density. The Stark effect on the absorption coefficient of n -doped InN 0.92 y P 1−1.92 y Bi y /InP MQWs was investigated. The Bi composition of these MQWs was adjusted for each electric field value in order to maintain the wavelength emission at 1.55 μ m.