Tens of micron-thick, crack-free yttrium iron garnet films on a Gd3Ga5O12 substrate based on the layer by layer growth method

In this paper, the maximum thickness of crack-free yttrium-iron-garnet ferrite film was increased from 7 to 13 µm by layer by layer growth method. Also, the effect of a layer by layer growth method on films morphology, crystal structure and magnetic properties were investigated. X-ray diffraction θ–2θ revealed the orientation of crystal structure could be increased by the layer-by-layer growth method. Scanning electron microscopy and stylus profiler measurement showed the roughness and morphology of film surface were improved efficiently after using the layer-by-layer growth method. Magnetic hysteresis loops and FMR spectrum representing this layer-by-layer growth method could efficiently increase film magnetism and decrease FMR linewidth. Consequently, this innovative method of layer-by-layer growth efficiently provides a pathway to prepare excellent properties, tens of micron-thick, crack-free yttrium iron garnet films and creates unique significance in the electronics industry.