Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements
The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, th...
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| Veröffentlicht in: | Russian microelectronics 2018-05, Vol.47 (3), p.197-200 |
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| container_title | Russian microelectronics |
| container_volume | 47 |
| creator | Benediktov, A. S. Shelepin, N. A. Ignatov, P. V. Mikhailov, A. A. Potupchik, A. G. |
| description | The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, the operability of SOI CMOS logic gates at high temperatures is estimated. |
| doi_str_mv | 10.1134/S1063739718030022 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2035023142</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2035023142</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2312-a29ce52b2403fa8722ffe4717591e5c5fb48d3eaa650ee7a76af5532d8f4d6393</originalsourceid><addsrcrecordid>eNp1UMtKw0AUHUTBWv0AdwOuo3eeSZYSqw1UukjrNkzTO2lKk9SZVOjfO6WCC3F1L5wX5xByz-CRMSGfCgZaxCKNWQICgPMLMmIakkhIpi7DH-DohF-TG--3AAxA6xFZ5t0X-qGpzdB0NR02SF-OnWmbimYb40w1oGsCXnnaWzpt6k20wHaPzgwHh7SY5zR7nxf0Y1bkGZ3ssMVu8Lfkypqdx7ufOybL18kim0az-VuePc-iigvGI8PTChVfcQnCmiTm3FqUMYtVylBVyq5kshZojFaAGJtYG6uU4OvEyrUWqRiTh7Pv3vWfh9Cj3PYH14XIkoNQEFIkDyx2ZlWu996hLfeuaY07lgzK03rln_WChp81PnC7Gt2v8_-ib9s_b20</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2035023142</pqid></control><display><type>article</type><title>Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements</title><source>Springer Online Journals Complete</source><creator>Benediktov, A. S. ; Shelepin, N. A. ; Ignatov, P. V. ; Mikhailov, A. A. ; Potupchik, A. G.</creator><creatorcontrib>Benediktov, A. S. ; Shelepin, N. A. ; Ignatov, P. V. ; Mikhailov, A. A. ; Potupchik, A. G.</creatorcontrib><description>The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, the operability of SOI CMOS logic gates at high temperatures is estimated.</description><identifier>ISSN: 1063-7397</identifier><identifier>EISSN: 1608-3415</identifier><identifier>DOI: 10.1134/S1063739718030022</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>CMOS ; Dynamic characteristics ; Electrical Engineering ; Energy management ; Engineering ; Logic circuits ; Silicon ; Temperature</subject><ispartof>Russian microelectronics, 2018-05, Vol.47 (3), p.197-200</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2312-a29ce52b2403fa8722ffe4717591e5c5fb48d3eaa650ee7a76af5532d8f4d6393</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063739718030022$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063739718030022$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27929,27930,41493,42562,51324</link.rule.ids></links><search><creatorcontrib>Benediktov, A. S.</creatorcontrib><creatorcontrib>Shelepin, N. A.</creatorcontrib><creatorcontrib>Ignatov, P. V.</creatorcontrib><creatorcontrib>Mikhailov, A. A.</creatorcontrib><creatorcontrib>Potupchik, A. G.</creatorcontrib><title>Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements</title><title>Russian microelectronics</title><addtitle>Russ Microelectron</addtitle><description>The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, the operability of SOI CMOS logic gates at high temperatures is estimated.</description><subject>CMOS</subject><subject>Dynamic characteristics</subject><subject>Electrical Engineering</subject><subject>Energy management</subject><subject>Engineering</subject><subject>Logic circuits</subject><subject>Silicon</subject><subject>Temperature</subject><issn>1063-7397</issn><issn>1608-3415</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1UMtKw0AUHUTBWv0AdwOuo3eeSZYSqw1UukjrNkzTO2lKk9SZVOjfO6WCC3F1L5wX5xByz-CRMSGfCgZaxCKNWQICgPMLMmIakkhIpi7DH-DohF-TG--3AAxA6xFZ5t0X-qGpzdB0NR02SF-OnWmbimYb40w1oGsCXnnaWzpt6k20wHaPzgwHh7SY5zR7nxf0Y1bkGZ3ssMVu8Lfkypqdx7ufOybL18kim0az-VuePc-iigvGI8PTChVfcQnCmiTm3FqUMYtVylBVyq5kshZojFaAGJtYG6uU4OvEyrUWqRiTh7Pv3vWfh9Cj3PYH14XIkoNQEFIkDyx2ZlWu996hLfeuaY07lgzK03rln_WChp81PnC7Gt2v8_-ib9s_b20</recordid><startdate>20180501</startdate><enddate>20180501</enddate><creator>Benediktov, A. S.</creator><creator>Shelepin, N. A.</creator><creator>Ignatov, P. V.</creator><creator>Mikhailov, A. A.</creator><creator>Potupchik, A. G.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20180501</creationdate><title>Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements</title><author>Benediktov, A. S. ; Shelepin, N. A. ; Ignatov, P. V. ; Mikhailov, A. A. ; Potupchik, A. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2312-a29ce52b2403fa8722ffe4717591e5c5fb48d3eaa650ee7a76af5532d8f4d6393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>CMOS</topic><topic>Dynamic characteristics</topic><topic>Electrical Engineering</topic><topic>Energy management</topic><topic>Engineering</topic><topic>Logic circuits</topic><topic>Silicon</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Benediktov, A. S.</creatorcontrib><creatorcontrib>Shelepin, N. A.</creatorcontrib><creatorcontrib>Ignatov, P. V.</creatorcontrib><creatorcontrib>Mikhailov, A. A.</creatorcontrib><creatorcontrib>Potupchik, A. G.</creatorcontrib><collection>CrossRef</collection><jtitle>Russian microelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Benediktov, A. S.</au><au>Shelepin, N. A.</au><au>Ignatov, P. V.</au><au>Mikhailov, A. A.</au><au>Potupchik, A. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements</atitle><jtitle>Russian microelectronics</jtitle><stitle>Russ Microelectron</stitle><date>2018-05-01</date><risdate>2018</risdate><volume>47</volume><issue>3</issue><spage>197</spage><epage>200</epage><pages>197-200</pages><issn>1063-7397</issn><eissn>1608-3415</eissn><abstract>The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, the operability of SOI CMOS logic gates at high temperatures is estimated.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063739718030022</doi><tpages>4</tpages></addata></record> |
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| subjects | CMOS Dynamic characteristics Electrical Engineering Energy management Engineering Logic circuits Silicon Temperature |
| title | Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements |
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