Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements

Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements

The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, th...

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Veröffentlicht in:Russian microelectronics 2018-05, Vol.47 (3), p.197-200
Hauptverfasser: Benediktov, A. S., Shelepin, N. A., Ignatov, P. V., Mikhailov, A. A., Potupchik, A. G.
Format: Artikel
Sprache:eng
Schlagworte:
CMOS
Dynamic characteristics
Electrical Engineering
Energy management
Engineering
Logic circuits
Silicon
Temperature
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Zusammenfassung:The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, the operability of SOI CMOS logic gates at high temperatures is estimated.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739718030022