DC reactively sputtered TiNx thin films for capacitor electrodes

Being used as typical electrode layers in the state-of-the-art microelectronic devices, titanium nitride (TiN x ) thin films have to meet the critical requirements for high conductivity, low surface roughness and thickness. In this work, TiN x thin films were deposited by direct current (DC) reactive sputtering in a nitrogen and argon ambient using a titanium target. Upon systematically adjusting the sputtering current, target-substrate distance and deposition time, the evolution of film properties were investigated in detail in terms of the composition, crystalline structure, resistivity, thickness and surface roughness. At finally optimized deposition conditions, ultra-thin (∼ 10 nm) TiN x thin films with a low resistivity of 125 µΩ cm and small surface roughness of 0.297 nm can be obtained. These superior performances together with low-running cost suggest great promise for the TiN x thin films to be used as electrodes in microelectronic devices.