Electron Raman scattering in a strained ZnO/MgZnO double quantum well

In this work, the electron Raman scattering in a strained ZnO/MgZnO double quantum wells is studied. The energy eigenvalues and the wave functions are obtained using the transfer matrix method. The effects of Mg composition, well width and barrier width on the internal electric field in well and barrier layers are investigated. Then, the influences of these parameters on the differential cross-section of electron Raman scattering are studied. Results indicate that the position, magnitude and the number of the peaks depend on the Mg composition, well width and barrier width. •Electron Raman scattering (ERS) in a strained ZnO/MgZnO quantum well is studied.•Impacts of structural parameters on the internal electric fields are investigated.•Effects of Mg composition, well and barrier widths on the ERS are investigated.•The number of the peaks increases with increasing well and barrier width.