Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers

The photoreflectance spectra of undoped InSb grown by the molecular beam epitaxy method on the n + -InSb substrate have been measured with a Fourier-transform infrared (FTIR) spectrometer. The intensity of the surface electric field has been determined from the period of the Franz–Keldysh oscillatio...

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Veröffentlicht in:	Journal of communications technology & electronics 2018-03, Vol.63 (3), p.289-291
Hauptverfasser:	Komkov, O. S., Firsov, D. D., Lvova, T. V., Sedova, I. V., Solov’ev, V. A., Semenov, A. N., Ivanov, S. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Articles from the Russian Journal Prikladnaya Fizika Carrier density Communications Engineering Electric fields Electrons Engineering Epitaxial growth Epitaxy Indium antimonide Infrared spectrometers Intermetallic compounds Measurement Molecular beam epitaxy Networks Sodium sulfide Substrates
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Beschreibung
Zusammenfassung:	The photoreflectance spectra of undoped InSb grown by the molecular beam epitaxy method on the n + -InSb substrate have been measured with a Fourier-transform infrared (FTIR) spectrometer. The intensity of the surface electric field has been determined from the period of the Franz–Keldysh oscillations observed at low temperatures. Since the value of the Fermi level pinning has been stabilized by treating the samples in an aqueous solution of Na 2 S, the field intensity depends mainly on the concentration of free carriers. The influence of the temperature of preliminary annealing of the substrate on the electron concentration in the epitaxial layer has been observed.
ISSN:	1064-2269 1555-6557
DOI:	10.1134/S1064226918030105