Cu-CMP洗浄後におけるCu表面状態の電気化学的評価

Cu-CMP洗浄後におけるCu表面状態の電気化学的評価

Cu oxidation state and Cu-inhibitor complex removal have been investigated by electrochemical measurements for developing the post Cu-CMP cleaner. To elucidate Cu oxide state, Sequential Electrochemical Reduction Analysis (SERA) is performed. As results, SERA could detect Cu2O and CuO independently...

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Veröffentlicht in:Seimitsu Kōgakkaishi 2018/04/05, Vol.84(4), pp.378-382
Hauptverfasser: 草野, 智博, 原田, 憲, 柴田, 俊明, 河瀬, 康弘
Format: Artikel
Sprache:jpn
Schlagworte:
Chemical reduction
copper oxidation state
Copper oxides
Corrosion inhibitors
Electrochemical analysis
open circuit potential
Open circuit voltage
organic residue removal
Oxidation
post CMP cleaning
sequential electrochemical reduction analysis
Valence
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Zusammenfassung:Cu oxidation state and Cu-inhibitor complex removal have been investigated by electrochemical measurements for developing the post Cu-CMP cleaner. To elucidate Cu oxide state, Sequential Electrochemical Reduction Analysis (SERA) is performed. As results, SERA could detect Cu2O and CuO independently and quantitatively. Furthermore, we measured Cu-inhibitor complex removal using Open Circuit Potential (OCP). OCP measurement could reveal difference of removal speed of Cu-inhibitor complex. So, SERA and OCP are effective to develop post Cu-CMP cleaner.
ISSN:0912-0289
1882-675X
DOI:10.2493/jjspe.84.378