An insight into the dopant selection for CeO2-based resistive-switching memory system: a DFT and experimental study

The aim of this study is to figure out better metal dopants for CeO 2 for designing highly efficient non-volatile memory (NVM) devices. The present DFT work involves four different metals doped interstitially and substitutionally in CeO 2 thin films. First principle calculations involve electron den...

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Veröffentlicht in:	Applied nanoscience 2018-04, Vol.8 (4), p.839-851
Hauptverfasser:	Hussain, Fayyaz, Imran, Muhammad, Rana, Anwar Manzoor, Khalil, R. M. Arif, Khera, Ejaz Ahmad, Kiran, Saira, Javid, M. Arshad, Sattar, M. Atif, Ismail, Muhammad
Format:	Artikel
Sprache:	eng
Schlagworte:	Cerium oxides Charge density Chemistry and Materials Science Computer memory Current carriers Data storage Density functional theory Density of states Dopants Doping Electron density Endurance Filaments Forming Materials Science Membrane Biology Memory devices Metals Nanochemistry Nanotechnology Nanotechnology and Microengineering Original Article Thin films Titanium Zirconium dioxide
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