Development of 55” 4K UHD OLED TV employing the internal gate IC with high reliability and short channel IGZO TFTs

We investigated oxide TFT backplane technology to employ the internal gate driver IC (GIP circuit) on 55” 4K OLED TV panel. For the GIP circuit, we developed the high reliability oxide TFTs, especially only ∆0.4 V Vth degradation under 100‐h long‐term PBTS stress and the short channel length TFTs (L...

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Veröffentlicht in:Journal of the Society for Information Display 2018-01, Vol.26 (1), p.36-41
Hauptverfasser: Noh, Ji Yong, Han, Dong Min, Jeong, Woo Cheol, Kim, Jong Woo, Cha, Soo Youle
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Sprache:eng
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Zusammenfassung:We investigated oxide TFT backplane technology to employ the internal gate driver IC (GIP circuit) on 55” 4K OLED TV panel. For the GIP circuit, we developed the high reliability oxide TFTs, especially only ∆0.4 V Vth degradation under 100‐h long‐term PBTS stress and the short channel length TFTs (L = 4.5um) for narrow bezel. Consequently, we demonstrated the 55‐in 4K OLED TV employing the internal gate IC with high reliability and short channel IGZO TFTs. We investigated oxide TFT backplane technology to employ the internal gate driver IC (GIP circuit) on 55” 4K OLED TV panel. For the GIP circuit, we developed the high reliability oxide TFTs, especially only ∆0.4 V Vth degradation under 100‐h long‐term PBTS stress and the short channel length TFTs (L = 4.5um) for narrow bezel. Consequently, we demonstrated the 55‐in 4K OLED TV employing the internal gate IC with high reliability and short channel IGZO TFTs.
ISSN:1071-0922
1938-3657
DOI:10.1002/jsid.628