Effect of the Pressure of Working Gas on the Microcrystalline Structure and Magnetic Properties of the Co Film Deposited with the Aid of Magnetron Sputtering
Effect of argon pressure 0.09 ≤ P ≤ 1 Pa on the microcrystalline structure and magnetic properties of the cobalt films with a thickness of d ≈ 300 nm that are fabricated with the aid of magnetic sputtering on the SiO 2 /Si substrates is studied. It is demonstrated that the films obtained at a pressu...
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Veröffentlicht in: | Journal of communications technology & electronics 2018, Vol.63 (1), p.80-86 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Effect of argon pressure 0.09 ≤
P
≤ 1 Pa on the microcrystalline structure and magnetic properties of the cobalt films with a thickness of
d
≈ 300 nm that are fabricated with the aid of magnetic sputtering on the SiO
2
/Si substrates is studied. It is demonstrated that the films obtained at a pressure of
Р
≥ 0.2 Pa exhibit mixed crystal phase with close-packed hexagonal (CPH) and face-centered cubic (FCC) lattice with the CPH–Co(002)/FCC–Co(111) texture and column microstructure over thickness. The films deposited at a pressure of
Р
≈ 0.09 Pa are characterized by the dominant FCC crystal phase with the FCC–Со(200) texture and inhomogeneous microstructure over thickness: at the interface with the substrate in a layer with a thickness of
d
1
≈ 150 nm, the films exhibit quasi-homogeneous microstructure that is transformed into the granulated microstructure at
d
>
d
1
. The films deposited at a pressure of
Р
≈ 0.09 Pa have the saturation magnetization that is higher by 30% and the coercive force and linewidth of ferromagnetic resonance that are several times less than those of the film obtained at a pressure of
Р
≈ 1 Pa. |
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ISSN: | 1064-2269 1555-6557 |
DOI: | 10.1134/S1064226918010023 |