Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs

Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs

A physics-based compact model of the parasitic bipolar current induced by an energetic particle is presented for single-event transients in FinFETs. The terminal charges are modeled to predict the body voltage of the FinFET in the transient correctly. The models are implemented using Verilog-A and a...

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Veröffentlicht in:IEEE transactions on nuclear science 2018-03, Vol.65 (3), p.866-870
Hauptverfasser: Yi, Boram, Lee, Boung Jun, Oh, Jin-Hwan, Kim, Ji-Seon, Kim, Jun-Hyeok, Yang, Ji-Woon
Format: Artikel
Sprache:eng
Schlagworte:
CAD
Compact model
Computational modeling
Computer aided design
Computer simulation
Energetic particles
FinFET
FinFETs
Ionization
parasitic bipolar junction transistor (BJT) current
Physics
Semiconductor device modeling
Semiconductor process modeling
single-event transient (SET)
Solid modeling
Transient analysis
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Beschreibung
Zusammenfassung:A physics-based compact model of the parasitic bipolar current induced by an energetic particle is presented for single-event transients in FinFETs. The terminal charges are modeled to predict the body voltage of the FinFET in the transient correctly. The models are implemented using Verilog-A and are verified through 3-D technology computer-aided design (TCAD) simulations. The results of the modeling show good agreement with the TCAD data, for both structural variations and energy variations of the energetic particles.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2018.2796622