A DC Model of the Planar Dual‐Gated FD‐SOI MOSFET that Captures the Effects of High Biases and HALO

No models exist for fully depleted silicon‐on‐insulator (FD‐SOI) metal‐oxide‐silicon field‐effect‐transistors (MOSFETs) that operate at high currents and voltages. Operation at high currents and voltages dictates the radio‐frequency (rf) output power that such devices can deliver and transmit from t...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2018-03, Vol.215 (5), p.n/a
1. Verfasser:	Tarakji, Ahmad Houssam
Format:	Artikel
Sprache:	eng
Schlagworte:	body tied source CMOS fully depleted silicon‐on‐insulator metal‐oxide‐silicon field‐effect‐transistors HALO high bias Integrated circuits Ionization MOSFETs Radio frequency Semiconductor devices Silicon SOI (semiconductors) Threshold voltage Transistors
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