Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips
The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit...
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Veröffentlicht in: | Russian microelectronics 2017-12, Vol.46 (7), p.454-457 |
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container_title | Russian microelectronics |
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creator | Roshchin, V. M. Petukhov, I. N. Sen’chenko, K. S. Roshchina, A. V. Shilina, T. V. |
description | The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit between the contact areas with the solder material has been shown. |
doi_str_mv | 10.1134/S1063739717070095 |
format | Article |
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subjects | Chip formation Electrical Engineering Engineering Mounting |
title | Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips |
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