Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips

The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Russian microelectronics 2017-12, Vol.46 (7), p.454-457
Hauptverfasser: Roshchin, V. M., Petukhov, I. N., Sen’chenko, K. S., Roshchina, A. V., Shilina, T. V.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit between the contact areas with the solder material has been shown.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739717070095