Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips
The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit...
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Veröffentlicht in: | Russian microelectronics 2017-12, Vol.46 (7), p.454-457 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit between the contact areas with the solder material has been shown. |
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ISSN: | 1063-7397 1608-3415 |
DOI: | 10.1134/S1063739717070095 |